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| SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1324 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -40 -30 -6 -3 -5 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SB1324 Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter on state voltage Diode forward voltage Base-emitter resistance Symbol ICBO hFE fT Cob VCE(sat) VBE(sat) Testconditons VCB = 30V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -2A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz IC = -2A , IB = -100mA VCE = -2V , IC = -1A -40 -40 -30 70 50 Min Transistors Typ Max -1 Unit iA 100 55 -0.25 -0.6 -1.5 MHz pF V V V V V 1.5 V KU V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -10iA , RBE = V(BR)CEO IC = -10mA , RBE = VF RBE IF=0.5A 0.8 Marking Marking BL 2 www.kexin.com.cn |
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